document number: 89127 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 17-may-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 19 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 smd photovoltaic solar cell protection schottky rectifier SS12P4S vishay general semiconductor new product typical applications for use in solar cell junction box as a bypass diode for protection, using dc forward current without reverse bias. features ? very low profile - typical height of 1.1 mm ? ideal for automated placement ? guardring for overvoltage protection ? low forward voltage drop, low power losses ? high efficiency ? low thermal resistance ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to ie c 61249-2-21 definition mechanical data case: to-277a (smpc) molding compound meets ul 94 v-0 flammability rating base p/n-m3 - halogen-free, rohs compliant, and commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 m3 suffix meets jesd 201 class 1a whisker test notes (1) mounted on 30 mm x 30 mm al pcb with 50 mm x 25 mm x 100 mm fin heat sink (2) free air, mounted on recommended copper pad area (3) meets the requirements of iec 61215 ed. 2 bypass diode thermal test primary characteristics i f(av) 12 a v rrm 40 v i fsm 280 a e as 20 mj v f at i f = 12 a 0.43 v t j max. 150 c k 2 1 to-277a ( s mpc) e s mp ? s eries anode 1 anode 2 cathode k maximum ratings (t a = 25 c unless otherwise noted) parameter symbol SS12P4S unit device marking code 124s maximum repetitive pe ak reverse voltage v rrm 40 v maximum dc forward current (fig. 1) i f 12 (1) 4.4 (2) a peak forward surge current 10 ms single ha lf sine-wave superimposed on rated load i fsm 280 a non-repetitive avalanche energy at i as = 2.0 a, t j = 25 c e as 20 mj operating junction and storage temperature range t op , t stg - 55 to + 150 c junction temperature in dc forward current without reverse bias, t ? 1 h (3) t j ? 200 c www.datasheet.co.kr datasheet pdf - http://www..net/
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 89127 20 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 17-may-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 SS12P4S vishay general semiconductor new product notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width ? 40 ms notes (1) free air, mounted on recommended copper pad area. thermal resistance r ? ja - junction to ambient. (2) mounted on 30 mm x 30 mm al pcb with 50 mm x 25 mm x 100 mm fin heat sink. thermal resistance r ? jm - junction to mount. ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - maximum cu rrent derating curve notes (1) mounted on 30 mm x 30 mm al pcb with 50 mm x 25 mm x 100 mm fin heat sink, t m measured at the terminal of cathode band (2) mounted on 30 mm x 30 mm al pcb (r ? ja = 20 c/w) (3) mounted on 30 mm x 30 mm x 2 copper pad areas fr4 pcb (r ? ja = 30 c/w) (4) mounted on 25 mm x 25 mm x 2 copper pad areas fr4 pcb (r ? ja = 30 c/w ) (5) free air, mounted on recommended copper pad area (r ? ja = 100 c/w) electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit instantaneous forward voltage i f = 6 a t a = 25 c v f (1) 0.43 - v i f = 12 a 0.50 0.60 i f = 6 a t a = 125 c 0.33 - i f = 12 a 0.43 0.52 reverse current v r = 40 v t a = 25 c i r (2) 100 800 a t a = 125 c 50 100 ma typical junction capacitance 4.0 v, 1 mhz c j 750 - pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol value unit typical thermal resistance r ? ja (1) 100 c/w r ? jm (2) 3 ordering information (example) preferred p/n unit weight (g) preferred pa ckage code base quantity delivery mode SS12P4S-m3/86a 0.10 86a 1500 7" diameter plastic tape and reel SS12P4S-m3/87a 0.10 87a 6500 13" diameter plastic tape and reel 10 12 14 8 6 4 2 0 0 25 50 75 125 150 dc fo r w ard c u rr ent (a) am b ient temperat u re (c) 100 t m = 100 c (1) t a = 25 c (2) (5) t a = 25 c (3) t a = 25 c (4) www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 89127 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 17-may-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 21 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 SS12P4S vishay general semiconductor new product fig. 2 - forward power loss characteristics fig. 3 - typical instantaneous forward characteristics fig. 4 - typical reverse leakage characteristics fig. 5 - typical j unction capacitance 0 1 2 3 4 5 6 7 02468101214 d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0.8 d = 1.0 average for w ard c u rrent (a) average po w er loss (w) d = t p /t t p t 0.1 1 10 100 0 0.1 0.2 0.3 0.4 0.5 0.7 t a = 150 c t a = 125 c t a = 25 c instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) 0.6 0.001 0.1 1 10 100 1000 10 20 30 40 50 60 70 80 90 100 percent of rated peak reverse v oltage (%) instantaneo u s reverse c u rrent (ma) t a = 125 c t a = 25 c 0.01 t a = 150 c 100 1000 10 000 0.1 1 10 100 reverse v oltage ( v ) j u nction capaci tance (pf) t j = 25 c f = 1.0 mhz v sig = 50 m v p-p www.datasheet.co.kr datasheet pdf - http://www..net/
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 89127 22 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 17-may-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 SS12P4S vishay general semiconductor new product package outline dimensions in inches (millimeters) conform to jedec to-277a to-277a ( s mpc) 0.016 (0.40) 0.006 (0.15) 0.047 (1.20) 0.039 (1.00) 0.146 (3.70) 0.134 (3.40) 0.087 (2.20) 0.075 (1.90) 0.189 (4.80) 0.173 (4.40) 0.049 (1.24) 0.037 (0.94) 0.053 (1.35) 0.041 (1.05) 0.030 (0.75) nom. 0.084 (2.13) nom. 0.155 (3.94) nom. mountin g pa d layout 0.268 (6.80) 0.186 (4.72) min. 0.050 (1.27) min. 0.041 (1.04) 0.055 (1.40) min. 0.189 (4.80) min. 0.187 (4.75) 0.175 (4.45) 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 0.171 (4.35) 0.167 (4.25) k 21 www.datasheet.co.kr datasheet pdf - http://www..net/
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